首页> 外文OA文献 >Improvement of the V-1 characteristic of zinc oxide (ZnO) based metal oxide varistors (MOVs) using Silicon Telluride (SiTe2) and Lanthanum Hexaboride (LaB6) materials
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Improvement of the V-1 characteristic of zinc oxide (ZnO) based metal oxide varistors (MOVs) using Silicon Telluride (SiTe2) and Lanthanum Hexaboride (LaB6) materials

机译:使用碲化硅(SiTe2)和六硼化镧(LaB6)材料改善氧化锌(ZnO)基金属氧化物压敏电阻(MOV)的V-1特性

摘要

A study to improve the V-I characteristic of the ZnO-based commercial MOVudusing a characterised chalcogenide material, Silicon Telluride (SiTe2), and a fieldemissiveudmaterial, Lanthanum Hexaboride (LaB6), has been conducted. The needudarises in that the current commercial ZnO-based metal oxide varistors (MOVs)udhave a V-I characteristic that departs substantially from that of the ideal one. As audresult of this shortcoming, they do not offer ideal clamping action, and theudconsequence of this is that the protection they are supposed to offer isudcompromised. The problem behind this shortcoming is the microstructure, whichudis not ideal. An ideal microstructure to constitute an ideal device is not known yet,udhence the problem.udBased on a model, a prototype MOV was fabricated using conventional sinteringudtechniques. The phases and microstructure of this prototype MOV were studiedudusing XRD and SEM with EDS facility. The V-I characteristic was studied usingudthe two point probe method, and the clamping action was studied using anudimpulse generator.udA prototype MOV with a near ideal V-I characteristic, with improvements in theudleakage, active (breakdown) and up-turn regions was developed. In the leakageudregion, leakage currents were reduced by 1.0 %. In the active region, the rate ofudbreakdown was increased and discharge currents were increased by on average 4udtimes those of a dimensionally comparable commercial MOV. The instabilityudresponsible for the breakdown was found to be field dependent. The up-turnudregion was removed. The corresponding surge clamping action of the prototypeudMOV was identical to that that of the studied commercial MOV, but with lowerudsurge current. The improvements are attributed to the usage of characterisedudpowders and new additives, as well as the process method, in the development ofudthe prototype MOV.udOne other related major finding is that the pyrochlore phase, Bi2Zn(Zn4/3 Sb2/3)O6,udand the spinel phase, Zn(Zn4/3 Sb2/3)O4 are not the only phases that can give rise toudthe varistor property which gives rise to the non-linear V-I characteristic in audZnO-based commercial MOV. This is contrary to current know-how.udA prototype ZnO-based MOV with near ideal V-I characteristic can be developed.
机译:已经进行了一项研究,以改善使用已表征的硫族化物材料碲化硅(SiTe2)和场致发射材料六硼化镧(LaB6)的ZnO基商用MOV的V-I特性。需求在于,当前的商用ZnO基金属氧化物压敏电阻(MOV)具有V-I特性,该特性与理想特性完全不同。由于该缺点,它们不能提供理想的夹紧作用,其后果是,本应提供的保护受到损害。该缺点背后的问题是微观结构,这是不理想的。构成问题的理想器件尚不清楚,这是一个问题。 ud基于模型,使用常规烧结 udn技术制造了原型MOV。用XRD和SEM和EDS装置研究了该原型MOV的相和微观结构。使用两点探针法研究了VI特性,并使用了一个双脉冲发生器研究了钳位作用。ud具有接近理想VI特性的MOV原型,改进了渗漏,有源(击穿)和上升特性。转向区域发达。在泄漏区,泄漏电流降低了1.0%。在有源区域中,击穿速率增加,放电电流平均增加到尺寸可比的商用MOV的4倍。发现不稳定不负责任的击穿与现场有关。上调 ud区域已删除。原型 udMOV的相应浪涌钳制作用与研究的商用MOV相同,但具有更低的 udsurge电流。改进归因于MOV原型的开发中使用了特征性的粉末和新型添加剂以及加工方法。 ud的另一个相关主要发现是烧绿石相Bi2Zn(Zn4 / 3 Sb2 / 3)O6, ud和尖晶石相Zn(Zn4 / 3 Sb2 / 3)O4并不是唯一可以引起压敏电阻特性的相,而压敏电阻特性会导致基于a udZnO的非线性VI特性商业MOV。这与当前的技术相矛盾。 ud可以开发出具有接近理想V-I特性的基于ZnO的MOV原型。

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    Hove Miidzo;

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  • 年度 2009
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